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Arsenide sputtering target (compound semiconductor sputtering targets

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Huizhou Tianyi rare material Co., Ltd

Sputtering Target Shape: discs, plate, rod, tube, sheet, Delta, and per drawing

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Sputtering Targets Spec.: Diameter: 355.6mm (14") max. Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.

MaSerial Name

Formula

Purity

Zinc Arsenide

Zn3As2

99.99%, 99.999%

Germanium Arsenide

GeAs

99.99%, 99.999%

Gallium Arsenide

GaAs

99.99%, 99.999%

Copper Arsenide

Cu3As

99.99%, 99.999%

Cobalt Arsenide

CoAs2

99.99%

We have only listed the more popular material. Please feel free contact us (admin@scarcemetal.com) with any special requirements at any times, we will try to get back for you ASAP.

About Arsenide compound semiconductor sputtering targets material basic knowledge: