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ITO Sputtering target

ITO Sputtering targetJINXING METAL offers a complete line of sputtering targets ranging from commercial grade to highest purity, zone refined Ultra-Pure grade. These materials can be fabricated to fit all commercially available systems or to specific dimensions required for your particular applications. A number of metallurgical techniques are employed in PVD material fabrication.

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Description of ITO Sputtering target

Ceramic Material (customized shape is available)

Conventional Products Table

Type

Product Name

Formula

Purity

Melting Point

Density (g/cc)

Available Shapes

Oxides

Aluminium Oxide

Al2O3

4N

2045

4

Target, Particle

Bismuth(III) Oxide

Bi2O3

4N

820

8.9

Target, Particle

Chromium(III) Oxide

Cr2O3

4N

2435

5.2

Target, Particle

Erbium Oxide

Er2O3

4N

2378

8.64

Target, Particle

Hafnium Oxide

HfO2

4N

2812

9.7

Target, Particle

Indium Tin Oxide

ITO

4N

1565

7.6

Target

Magnesium Oxide

MgO

4N

2800

3.58

Target, Particle

Niobium Pentoxide

Nb2O5

4N

1530

4.47

Target, Particle

Neodymium(III) Oxide

Nd2O3

4N

2272

7.2

Target, Particle

Nickel Oxide

NiO

4N

1990

7.45

Target, Particle

Scandium Oxide

Sc2O3

4N

2480

3.86

Target, Particle

Silicon Oxide

SiO

4N

1702

2.13

Target, Particle

Silicon Dioxide

SiO2

4N

1610

2.2

Target, Particle, Crystal

Samarium(III) Oxide

Sm2O3

4N

2350

7.4

Target, Particle

Tantalum Pentoxide

Ta2O5

4N

1800

8.7

Target, Particle

Titanium Dioxide

TiO2

4N

1800

4.29

Target, Particle

Titanium (V) Oxide

Ti3O5

4N

1750

4.57

Target, Particle

Vanadium(V) Oxide

V2O5

4N

690

3.36

Target, Particle

Yttrium(III) Oxide

Y2O3

4N

2680

4.8

Target, Particle

Zinc Oxide

ZnO

4N

1975

5.6

Target, Particle

Aluminium-doped Zinc Oxide

AZO

4N

\

5.4

Target

Zirconium Dioxide

ZrO2

4N

2700

5.5

Target, Particle

Fluoride

Barium Fluoride

BaF2

4N

1280

4.8

Target, Particle

Calcium Fluoride

CaF2

4N

1360

3.13

Target, Particle

Cerium Fluoride

CeF3

4N

1418

6.16

Target, Particle

Potassium Fluoride

KF

4N

880

2.48

Target, Particle

Lanthanum(III) Fluoride

LaF3

4N

1490

6

Target, Particle

Magnesium Fluoride

MgF2

4N

1266

4.2

Target, Particle

Sodium Fluoride

NaF

4N

988

2.79

Target, Particle

Others

Barium Titanate

BaTiO3

4N

1620

3.96

Target, Particle

Strontium Titanate

SrTiO3

4N

2080

5.12

Target, Particle

Zinc Sulfide

ZnS

4N

1830

4.1

Target, Particle

Silicon Nitride

Si3N4

4N

sublimation

3.44

Target, Particle

Titanium Nitride

TiN

4N

2950

5.43

Target, Particle

Aluminium Nitride

AlN

4N

sublimation

3.26

Target, Particle

Boron Nitride

BN

4N

3000

2.25

Target, Particle

Slilicon Carbide

SiC

4N

2700

3.22

Target

Detail of ITO Sputtering target

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